2SB648A-C

Technical Characteristics

• Mounting Facility Quantity

  1

• Terminal Type And Quantity

  3 uninsulated wire lead

• Special Features

  junction pattern arrangement: pnp

• Power Rating Per Characteristic

  1.0 watts small-signal input power, common-collector minimum

• Overall Length

  11.5 millimeters maximum

• Voltage Rating In Volts Per Characteristic

  -180.0 maximum collector to base voltage/static/emitter open and -160.0 maximum collector to emitter voltage/static/base open and -5.0 maximum emitter to base voltage, static, collector open

• Internal Configuration

  junction contact

• Transfer Ratio

  60.0 minimum static forward current transfer ratio, common-emitter and 320.0 maximum static forward current transfer ratio, common-emitter

• Overall Height

  3.1 millimeters maximum

• Semiconductor Material

  silicon

• Inclosure Material

  plastic

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-126

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Overall Width

  8.5 millimeters maximum

• Current Rating Per Characteristic

  -50.00 milliamperes source cutoff current maximum