2SD668A-C

Semiconductor Devices and Associated Hardware

TRANSISTOR

2SD668A-C

5961-01-214-7045

5961 - Semiconductor Devices and Associated Hardware

Hitachi Seisaku Sy0

TRANSISTOR

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Technical Characteristics

  • Mounting Facility Quantity

    1

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Power Rating Per Characteristic

    1.0 watts small-signal input power, common-collector minimum

  • Overall Length

    11.5 millimeters maximum

  • Current Rating Per Characteristic

    100.00 milliamperes source cutoff current maximum

  • Voltage Rating In Volts Per Characteristic

    180.0 maximum collector to base voltage/static/emitter open and 160.0 maximum collector to emitter voltage/static/base open and 5.0 maximum emitter to base voltage, static, collector open

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Transfer Ratio

    60.0 minimum static forward current transfer ratio, common-emitter and 320.0 maximum static forward current transfer ratio, common-emitter

  • Overall Height

    3.1 millimeters maximum

  • Semiconductor Material

    silicon

  • Inclosure Material

    plastic

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-126

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Overall Width

    8.5 millimeters maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

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