2SA1015-Y

Semiconductor Devices and Associated Hardware

TRANSISTOR

2SA1015-Y

5961-01-216-7264

5961 - Semiconductor Devices and Associated Hardware

Toshiba Syouji

TRANSISTOR

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Technical Characteristics

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Special Features

    junction pattern arrangement: pnp

  • Power Rating Per Characteristic

    400.0 milliwatts small-signal input power, common-collector minimum

  • Internal Configuration

    junction contact

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius junction

  • Overall Length

    0.210 inches maximum

  • Voltage Rating In Volts Per Characteristic

    -50.0 maximum collector to base voltage/static/emitter open and -50.0 maximum collector to emitter voltage/static/base open and -5.0 maximum emitter to base voltage, static, collector open

  • Overall Width

    0.205 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-92

  • Overall Height

    0.165 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Transfer Ratio

    400.0 maximum static forward current transfer ratio, common-emitter

  • Current Rating Per Characteristic

    -150.00 milliamperes source cutoff current maximum and 150.00 milliamperes source cutoff current maximum of standard range

  • Semiconductor Material

    silicon

  • Inclosure Material

    plastic

Certified to
AS6081 Methods

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