902168
Semiconductor Devices and Associated Hardware
TRANSISTOR
902168
5961 - Semiconductor Devices and Associated Hardware
Bae Systems Integrated Defense
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to base voltage, dc and 60.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.438 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-111
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Semiconductor Material
silicon
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Transfer Ratio
150.0 maximum static forward current transfer ratio, common-emitter
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Inclosure Material
metal
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Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector absolute
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Terminal Type And Quantity
3 tab, solder lug and 1 threaded stud
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Overall Length
1.219 inches maximum
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Thread Series Designator
unf
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Nominal Thread Size
0.190 inches
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Mounting Facility Quantity
1
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Mounting Method
threaded stud