JV2N3421S
Semiconductor Devices and Associated Hardware
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JV2N3421S
5961 - Semiconductor Devices and Associated Hardware
Joint Army-Navy Specifications
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Technical Characteristics
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Overall Length
0.260 inches maximum
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Overall Diameter
0.370 inches maximum
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Transfer Ratio
120.0 maximum static forward current transfer ratio, common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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(Non-Core Data) Unpackaged Unit Weight
1.3 grams
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Iii Precious Material
gold
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Inclosure Material
metal
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Terminal Length
0.500 inches minimum
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
8.0 maximum emitter to base voltage, static, collector open and 125.0 maximum collector to base voltage/static/emitter open and 80.0 maximum collector to emitter voltage/static/base open
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Current Rating Per Characteristic
3.00 amperes maximum collector current, dc
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Power Rating Per Characteristic
1.0 watts maximum total power dissipation
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Special Features
junction pattern arrangement: npn
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Iii Precious Material And Location
leads gold
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Terminal Type And Quantity
3 uninsulated wire lead