BZX55C3V0
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
BZX55C3V0
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
do-35
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Terminal Type And Quantity
2 uninsulated wire lead
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Overall Diameter
1.9 millimeters nominal
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Terminal Length
26.0 millimeters nominal
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Voltage Rating In Volts Per Characteristic
1.0 maximum forward voltage, dc
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Inclosure Material
glass
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Current Rating Per Characteristic
100.00 milliamperes source cutoff current preset
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Mounting Method
terminal
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Electrode Internally-Electrically Connected To Case
collector
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Overall Length
3.9 millimeters nominal