8002573-410

Semiconductor Devices and Associated Hardware

TRANSISTOR

8002573-410

5961-01-221-3587

5961 - Semiconductor Devices and Associated Hardware

Honeywell International Inc

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Terminal Length

    0.500 inches minimum

  • Internal Configuration

    field effect-dual gate

  • Channel Polarity And Control Type

    n-channel insulated gate type

  • Terminal Circle Diameter

    0.100 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • ~1

    40.0 maximum gate to source voltage

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum drain to gate voltage and 60.0 maximum drain to source voltage and

  • Current Rating Per Characteristic

    0.20 amperes maximum drain current

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius ambient air

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Overall Length

    0.150 inches maximum

  • Overall Diameter

    0.230 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-52

  • Mounting Method

    terminal

  • Power Rating Per Characteristic

    315.0 milliwatts maximum total device dissipation

  • Test Data Document

    07187-8002573 drawing

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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