04ES053-001
Semiconductor Devices and Associated Hardware
TRANSISTOR
04ES053-001
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Power Rating Per Characteristic
20.0 watts small-signal input power, common-collector absolute
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Terminal Circle Diameter
0.205 inches maximum
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Semiconductor Material
silicon
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Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Test Data Document
24587-04es053 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Current Rating Per Characteristic
4.00 amperes source cutoff current maximum of standard range and -16.00 amperes forward current, average any acceptable
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Terminal Length
0.500 inches minimum
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Internal Configuration
field effect
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
-100.0 maximum drain to source voltage and -100.0 maximum drain to gate voltage and 20.0 maximum gate to source voltage