1300176-2
Semiconductor Devices and Associated Hardware
TRANSISTOR
1300176-2
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector preset
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Voltage Rating In Volts Per Characteristic
180.0 minimum breakdown voltage, collector-to-emitter, base open and 200.0 minimum breakdown voltage, collector-to-base, emitter open and 8.0 minimum breakdown voltage, emitter-to-base, collector open
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Inclosure Material
metal
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Overall Length
1.480 inches nominal
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Current Rating Per Characteristic
5.00 amperes source cutoff current minimum and 20.00 amperes source cutoff current maximum
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Mounting Facility Quantity
1
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Test Data Document
70143-1300176 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Thread Series Designator
unf
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Overall Width Across Flats
0.870 inches nominal
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Semiconductor Material
silicon
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Nominal Thread Size
0.312 inches
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Transfer Ratio
30.0 minimum static forward current transfer ratio, common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction