2N5959
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5959
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Current Rating Per Characteristic
20.00 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-emitter, base open and 20.0 maximum breakdown voltage, collector-to-base, emitter open
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Transfer Ratio
30.0 minimum static forward current transfer ratio, common-emitter and 120.0 maximum static forward current transfer ratio, common-emitter
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Overall Diameter
0.215 inches maximum
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Length
0.250 inches minimum
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Overall Length
0.060 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector minimum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-50