35828E
Semiconductor Devices and Associated Hardware
TRANSISTOR
35828E
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
ceramic
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End Item Identification
agm-86b hamots
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Mounting Method
terminal
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Overall Height
0.057 inches nominal
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Current Rating Per Characteristic
60.00 milliamperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
12.0 maximum collector to emitter voltage/static/base open and 20.0 maximum collector to base voltage/static/emitter open and 1.5 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector preset
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Width
0.100 inches nominal
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Overall Length
0.100 inches nominal