NH13-1330452-1

Semiconductor Devices and Associated Hardware

TRANSISTOR

NH13-1330452-1

5961-01-228-5599

5961 - Semiconductor Devices and Associated Hardware

Defense Electronics Supply Center

TRANSISTOR

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Technical Characteristics

  • Transfer Ratio

    300.0 maximum static forward current transfer ratio, common-emitter

  • Internal Configuration

    junction contact

  • Overall Diameter

    0.335 inches maximum

  • Features Provided

    hermetically sealed case

  • Voltage Rating In Volts Per Characteristic

    75.0 maximum collector to base voltage/static/emitter open and 50.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Current Rating Per Characteristic

    800.00 milliamperes source cutoff current maximum

  • Inclosure Material

    metal

  • Special Features

    nuclear hardness critical item; junction pattern arrangement: npn

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Criticality Code Justification

    feat

  • Terminal Length

    0.250 inches minimum

  • Power Rating Per Characteristic

    3.0 watts small-signal input power, common-collector preset

  • Overall Length

    0.260 inches maximum

Certified to
AS6081 Methods

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Supplying Quality Products

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