NH13-1330452-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
NH13-1330452-1
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Transfer Ratio
300.0 maximum static forward current transfer ratio, common-emitter
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Internal Configuration
junction contact
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Overall Diameter
0.335 inches maximum
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
75.0 maximum collector to base voltage/static/emitter open and 50.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Current Rating Per Characteristic
800.00 milliamperes source cutoff current maximum
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Inclosure Material
metal
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Special Features
nuclear hardness critical item; junction pattern arrangement: npn
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Criticality Code Justification
feat
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Terminal Length
0.250 inches minimum
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Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector preset
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Overall Length
0.260 inches maximum