MTM55N10

Technical Characteristics

• Inclosure Material

  ceramic and metal

• Overall Length

  1.573 inches maximum

• Overall Height

  0.450 inches maximum

• Overall Width

  1.050 inches maximum

• Mounting Facility Quantity

  2

• Mounting Method

  unthreaded hole

• Voltage Rating In Volts Per Characteristic

  100.0 maximum drain to source voltage and 100.0 maximum drain to gate voltage

• Current Rating Per Characteristic

  25.00 amperes minimum on-state drain current

• Internal Configuration

  field effect

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Channel Polarity And Control Type

  n-channel junction type

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Power Rating Per Characteristic

  250.0 watts maximum total device dissipation

• Special Features

  electrostatic discharge sensitive

• Terminal Type And Quantity

  2 pin and 1 case