SVT250-10C

Semiconductor Devices and Associated Hardware

TRANSISTOR

SVT250-10C

5961-01-235-0513

5961 - Semiconductor Devices and Associated Hardware

Trw Electronics And Defense Sector

TRANSISTOR

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Technical Characteristics

  • Test Data Document

    53711-5595298 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Power Rating Per Characteristic

    140.0 watts small-signal input power, common-collector preset

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Overall Length

    1.550 inches maximum

  • Overall Height

    0.470 inches maximum

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    20.00 amperes source cutoff current maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Voltage Rating In Volts Per Characteristic

    275.0 maximum collector to base voltage/static/emitter open and 250.0 maximum collector to emitter voltage/static/base open

Certified to
AS6081 Methods

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