8404601CB

Technical Characteristics

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Terminal Surface Treatment

  solder

• Case Outline Source And Designator

  d-1 mil-m-38510

• Maximum Power Dissipation Rating

  500.0 milliwatts

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  2.0 volts minimum power source and 6.0 volts maximum power source

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Length

  0.785 inches maximum

• Special Features

  nuclear hardness critical items

• Design Function And Quantity

  4 gate, exclusive or

• Current Rating Per Characteristic

  -25.00 milliamperes collector cutoff current, dc, with specified resistance between base and emitter nominal and 25.00 milliamperes reverse current, dc nominal

• Features Provided

  hermetically sealed and monolithic and high speed

• Input Circuit Pattern

  quad 2 input

• Terminal Type And Quantity

  14 printed circuit

• Nuclear Hardness Critical Feature

  hardened

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Time Rating Per Chacteristic

  180.00 nanoseconds maximum propagation delay time, low to high level output and 180.00 nanoseconds maximum propagation delay time, high to low level output

• Body Height

  0.140 inches maximum