583R857H02

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Maximum Power Dissipation Rating

  794.0 milliwatts

• Bit Quantity (Non-Core)

  4096

• Word Quantity (Non-Core)

  1024

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Body Height

  0.185 inches maximum

• Specification/Standard Data

  81349-mil-m-38510/206 government specification

• Time Rating Per Chacteristic

  85.00 nanoseconds maximum propagation delay time, high to low level output and 85.00 nanoseconds maximum propagation delay time, low to high level output

• Case Outline Source And Designator

  d-6 mil-m-38510

• Current Rating Per Characteristic

  140.00 milliamperes reverse current, dc absolute

• Features Provided

  bipolar and hermetically sealed and monolithic and programmable and schottky

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Memory Device Type

  prom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Body Length

  0.960 inches maximum

• Terminal Type And Quantity

  18 printed circuit

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic