BFX85/FBQ

Semiconductor Devices and Associated Hardware

TRANSISTOR

BFX85/FBQ

5961-01-242-7097

5961 - Semiconductor Devices and Associated Hardware

Defense Electronics Supply Center

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Overall Diameter

    8.5 millimeters maximum

  • Power Rating Per Characteristic

    2.86 watts small-signal input power, common-collector preset

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum collector to base voltage/static/emitter open and 60.0 maximum collector to emitter voltage/static/base open

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-39

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Transfer Ratio

    70.0 minimum static forward current transfer ratio, common-emitter

  • Current Rating Per Characteristic

    1.00 amperes source cutoff current maximum

  • Inclosure Material

    metal

  • Overall Length

    6.6 millimeters maximum

  • Terminal Length

    12.7 millimeters nominal

Certified to
AS6081 Methods

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