BFX85/FBQ
Semiconductor Devices and Associated Hardware
TRANSISTOR
BFX85/FBQ
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
8.5 millimeters maximum
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Power Rating Per Characteristic
2.86 watts small-signal input power, common-collector preset
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Voltage Rating In Volts Per Characteristic
100.0 maximum collector to base voltage/static/emitter open and 60.0 maximum collector to emitter voltage/static/base open
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Transfer Ratio
70.0 minimum static forward current transfer ratio, common-emitter
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Current Rating Per Characteristic
1.00 amperes source cutoff current maximum
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Inclosure Material
metal
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Overall Length
6.6 millimeters maximum
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Terminal Length
12.7 millimeters nominal