NE57510D
Semiconductor Devices and Associated Hardware
TRANSISTOR
NE57510D
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Length
12.5 millimeters minimum
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Precious Material And Location
body gold and body platinum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Current Rating Per Characteristic
250.00 milliamperes source cutoff current maximum
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Features Provided
hermetically sealed case
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-46
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Power Rating Per Characteristic
4.4 watts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Precious Material
gold and platinum
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Terminal Circle Diameter
2.5 millimeters nominal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
20.0 maximum collector to emitter voltage/static/base open and 40.0 maximum collector to base voltage/static/emitter open and 3.0 maximum emitter to base voltage, static, collector open
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Transfer Ratio
15.0 minimum static forward current transfer ratio, common-emitter and 200.0 maximum static forward current transfer ratio, common-emitter
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Inclosure Material
metal
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Overall Diameter
5.9 millimeters maximum
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Overall Length
2.2 millimeters maximum