Q-129-M
Semiconductor Devices and Associated Hardware
TRANSISTOR
Q-129-M
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
17.5 millimeters nominal
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Overall Height
18.6 millimeters nominal
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Precious Material
gold and platinum
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Inclosure Material
metal
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Overall Width
17.5 millimeters nominal
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Internal Junction Configuration
npn
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Mounting Method
press fit
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Voltage Rating In Volts Per Characteristic
40.0 maximum collector to base voltage/static/emitter open and 30.0 maximum emitter to base voltage,static,collector open and 20.0 maximum collector to emitter voltage/static/base open
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Current Rating Per Characteristic
150.00 milliamperes maximum collector current,dc
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Power Rating Per Characteristic
44.0 watts maximum total power dissipation
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Transfer Ratio
15.0 minimum static forward current transfer ratio,common-emitter and 200.0 maximum static forward current transfer ratio,common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material And Location
body gold and body platinum
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Terminal Type And Quantity
4 ribbon