8406601QB

Technical Characteristics

• Features Provided

  hermetically sealed and burn in and programmable and monolithic

• Case Outline Source And Designator

  d-5 mil-m-38510

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  pal

• Nuclear Hardness Critical Feature

  hardened

• Body Length

  2.096 inches maximum

• Time Rating Per Chacteristic

  250.00 nanoseconds maximum propagation delay time, low to high level output and 250.00 nanoseconds maximum propagation delay time, high to low level output

• Special Features

  nuclear hardness critical items

• Test Data Document

  14933-84066 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Terminal Type And Quantity

  20 printed circuit

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  8.0 volts maximum power source

• Input Circuit Pattern

  38 input

• Body Width

  0.620 inches maximum

• Current Rating Per Characteristic

  10.00 microamperes forward current, nonrepetitive, maximum peak total value minor

• Body Height

  0.210 inches maximum