UNFN3000BS
Semiconductor Devices and Associated Hardware
TRANSISTOR
UNFN3000BS
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.180 inches maximum
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Overall Diameter
0.335 inches maximum
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Internal Configuration
field effect
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-205
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Features Provided
hermetically sealed case and electrostatic sensitive
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Semiconductor Material
silicon
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Current Rating Per Characteristic
12.00 amperes maximum drain current
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Terminal Type And Quantity
3 uninsulated wire lead
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Terminal Length
0.500 inches minimum
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Channel Polarity And Control Type
n-channel junction type
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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~1
-circuited to source and 100.0 maximum breakdown voltage, gate-to-source, with a
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~2
ll other terminals short-circuited to source
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, drain-to-source, with all other terminals short
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Power Rating Per Characteristic
75.0 watts maximum total device dissipation