585R650H02

Semiconductor Devices and Associated Hardware

TRANSISTOR

585R650H02

5961-01-248-7216

5961 - Semiconductor Devices and Associated Hardware

Northrop Grumman Systems Corporation

TRANSISTOR

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Technical Characteristics

  • Current Rating Per Characteristic

    50.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum

  • Internal Configuration

    junction contact-darlington connected

  • Power Rating Per Characteristic

    300.0 watts small-signal input power, common-collector absolute

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

  • Electrode Internally-Electrically Connected To Case

    collector

  • Special Features

    junction pattern arrangement: pnp

  • Voltage Rating In Volts Per Characteristic

    120.0 maximum collector to emitter voltage/static/base open and 120.0 maximum collector to base voltage/static/emitter open and 5.0 maximum emitter to base voltage, static, collector open

  • Features Provided

    hermetically sealed case

  • Overall Width

    1.050 inches maximum

  • Transfer Ratio

    30000.0 maximum static forward current transfer ratio, common-emitter

  • Semiconductor Material

    silicon

  • Overall Height

    0.275 inches nominal

  • Overall Length

    1.550 inches maximum

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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