585R649H02
Semiconductor Devices and Associated Hardware
TRANSISTOR
585R649H02
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
2 pin and 1 case
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Mounting Method
unthreaded hole
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Electrode Internally-Electrically Connected To Case
collector
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Internal Configuration
junction contact-darlington connected
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Mounting Facility Quantity
2
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Inclosure Material
metal
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Special Features
junction pattern arrangement: pnp
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Transfer Ratio
30000.0 maximum static forward current transfer ratio, common-emitter
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Power Rating Per Characteristic
300.0 watts maximum total device dissipation
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Current Rating Per Characteristic
-50.00 amperes maximum collector current, dc and -2.00 amperes maximum base current, dc
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Voltage Rating In Volts Per Characteristic
-120.0 maximum collector to base voltage/static/emitter open and -5.0 maximum emitter to base voltage, static, collector open
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Overall Width
0.050 inches maximum
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Overall Height
0.275 inches nominal
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Overall Length
1.550 inches maximum