3N200-B
Semiconductor Devices and Associated Hardware
TRANSISTOR
3N200-B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Voltage Rating In Volts Per Characteristic
20.0 maximum drain to source voltage
-
Channel Polarity And Control Type (Non-Core)
n-channel junction type
-
Features Provided
hermetically sealed case
-
Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
-
Semiconductor Material
silicon
-
Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum of standard range
-
Power Rating Per Characteristic
330.0 milliwatts small-signal input power, common-collector preset
-
Terminal Length
0.500 inches minimum
-
Internal Configuration
field effect
-
Inclosure Material
metal
-
Terminal Type And Quantity
4 uninsulated wire lead
-
Overall Length
0.170 inches minimum and 0.210 inches maximum
-
Terminal Circle Diameter
0.100 inches nominal
-
Mounting Method
terminal
-
Overall Diameter
0.209 inches minimum and 0.230 inches maximum
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72