352-1542-010

Semiconductor Devices and Associated Hardware

TRANSISTOR

352-1542-010

5961-01-250-8511

5961 - Semiconductor Devices and Associated Hardware

Rockwell Collins Inc.

TRANSISTOR

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Technical Characteristics

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Overall Length

    0.260 inches maximum

  • Current Rating Per Characteristic

    1.00 amperes source cutoff current maximum and 0.50 amperes source cutoff current minimum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Overall Diameter

    0.335 inches maximum

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    6.0 watts small-signal input power, common-collector absolute

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-5

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    800.0 maximum breakdown voltage, collector-to-base, emitter open and 625.0 maximum breakdown voltage, collector-to-emitter, base open and 8.0 maximum breakdown voltage, emitter-to-base, collector open

  • Transfer Ratio

    20.0 minimum static forward current transfer ratio, common-emitter and 225.0 maximum static forward current transfer ratio, common-emitter

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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