VP0109N9
Semiconductor Devices and Associated Hardware
TRANSISTOR
VP0109N9
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Overall Diameter
0.230 inches maximum
-
Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector absolute
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
-
Overall Length
0.150 inches maximum
-
Internal Configuration
field effect
-
Terminal Length
0.500 inches nominal
-
Inclosure Material
metal
-
Current Rating Per Characteristic
-2.00 amperes source cutoff current maximum of standard range
-
Test Data Document
45413-141595 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
-
Terminal Circle Diameter
0.100 inches nominal
-
Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
-
Voltage Rating In Volts Per Characteristic
-90.0 maximum drain to source voltage and -90.0 maximum drain to gate voltage and -20.0 maximum gate to source voltage
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Method
terminal