QPND-4566

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Component Function Relationship

  matched

• Overall Diameter

  0.073 inches maximum all semiconductor device diode

• Inclosure Material

  glass all semiconductor device diode

• Internal Configuration

  junction contact all semiconductor device diode

• Features Provided

  burn in and electrostatic sensitive

• Voltage Rating In Volts Per Characteristic

  100.0 maximum reverse voltage, dc all semiconductor device diode

• Internal Junction Configuration

  pin all semiconductor device diode

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius ambient air all semiconductor device diode

• Power Rating Per Characteristic

  400.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode

• Overall Length

  0.170 inches maximum all semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Terminal Length

  0.973 inches minimum all semiconductor device diode

• Field Force Effect Type

  electrostatic charge

• Component Name And Quantity

  3 semiconductor device diode