ID100

Technical Characteristics

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-78

• Inclosure Material

  metal

• Capacitance Rating In Picofarads

  1.0 maximum all semiconductor device diode

• Special Features

  all semiconductor device diode junction pattern arrangement: pn

• Voltage Rating In Volts Per Characteristic

  30.0 minimum breakdown voltage, dc all semiconductor device diode

• Overall Length

  0.185 inches maximum

• Component Name And Quantity

  2 semiconductor device diode

• Terminal Type And Quantity

  4 uninsulated wire lead

• Terminal Length

  0.500 inches minimum

• Overall Diameter

  0.370 inches maximum

• Current Rating Per Characteristic

  10.00 milliamperes maximum reverse current, dc all semiconductor device diode

• Mounting Method

  terminal

• Semiconductor Material

  silicon all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air

• Electrode Internally-Electrically Connected To Case

  collector

• Power Rating Per Characteristic

  300.0 milliwatts maximum total power dissipation all semiconductor device diode

• Features Provided

  hermetically sealed case