2N6661
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6661
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Function For Which Designed
switching
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Internal Configuration
field effect
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Mounting Method
terminal
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Terminal Circle Diameter
0.370 inches maximum
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Current Rating Per Characteristic
2.00 milliamperes maximum forward gate current and 1.10 amperes maximum drain current
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Unpackaged Unit Weight
1.5 grams
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.260 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.370 inches maximum
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Channel Polarity And Control Type
n-channel insulated gate type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Features Provided
hermetically sealed case and electrostatic sensitive
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
90.0 maximum gate to source voltage and 90.0 maximum drain to gate voltage
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Power Rating Per Characteristic
6.3 watts maximum off-state power dissipation