H989010-001B
Semiconductor Devices and Associated Hardware
TRANSISTOR
H989010-001B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
field effect
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case and electrostatic sensitive
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Voltage Rating In Volts Per Characteristic
100.0 maximum drain to gate voltage and 100.0 maximum drain to source voltage an
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~1
rent
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Current Rating Per Characteristic
32.00 amperes maximum off-state current, peak and 8.00 amperes maximum drain cur
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Inclosure Material
metal
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Overall Length
0.180 inches maximum
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Terminal Length
0.750 inches maximum
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Overall Diameter
0.370 inches maximum
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Channel Polarity And Control Type
n-channel junction type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-205af
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Semiconductor Material
silicon
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~1
d 20.0 maximum gate to source voltage
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Power Rating Per Characteristic
25.0 watts maximum total device dissipation
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Terminal Type And Quantity
3 uninsulated wire lead