H989010-001B

Semiconductor Devices and Associated Hardware

TRANSISTOR

H989010-001B

5961-01-254-9732

5961 - Semiconductor Devices and Associated Hardware

Raytheon Company

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Technical Characteristics

  • Internal Configuration

    field effect

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Features Provided

    hermetically sealed case and electrostatic sensitive

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum drain to gate voltage and 100.0 maximum drain to source voltage an

  • ~1

    rent

  • Current Rating Per Characteristic

    32.00 amperes maximum off-state current, peak and 8.00 amperes maximum drain cur

  • Inclosure Material

    metal

  • Overall Length

    0.180 inches maximum

  • Terminal Length

    0.750 inches maximum

  • Overall Diameter

    0.370 inches maximum

  • Channel Polarity And Control Type

    n-channel junction type

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-205af

  • Semiconductor Material

    silicon

  • ~1

    d 20.0 maximum gate to source voltage

  • Power Rating Per Characteristic

    25.0 watts maximum total device dissipation

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius ambient air

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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