UFN3008
Semiconductor Devices and Associated Hardware
TRANSISTOR
UFN3008
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
field effect
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Mounting Method
unthreaded hole
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Mounting Facility Quantity
2
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Voltage Rating In Volts Per Characteristic
20.0 maximum gate to source voltage and 500.0 maximum drain to source voltage
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Semiconductor Material
silicon
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Overall Width
1.050 inches maximum
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Features Provided
hermetically sealed case
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Electrode Internally-Electrically Connected To Case
drain
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Overall Length
1.573 inches maximum
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Current Rating Per Characteristic
32.00 amperes forward current, average any acceptable
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Terminal Type And Quantity
2 pin
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Overall Height
0.310 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air