JANTXV2N2609
Semiconductor Devices and Associated Hardware
TRANSISTOR
JANTXV2N2609
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
30.0 maximum gate to source voltage
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Inclosure Material
metal
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Internal Configuration
field effect
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Current Rating Per Characteristic
-10.00 milliamperes zero-gate-voltage source current megawatts
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Terminal Length
0.500 inches minimum
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Channel Polarity And Control Type (Non-Core)
p-channel junction type
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Semiconductor Material
silicon
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Test Data Document
30003-917as6018 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Overall Length
0.210 inches maximum
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Electrode Internally-Electrically Connected To Case
gate
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Power Rating Per Characteristic
300.0 milliwatts small-signal input power, common-collector preset
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Overall Diameter
0.230 inches maximum
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead