2N5004
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5004
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
1.218 inches maximum
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Mounting Facility Quantity
1
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Overall Width Across Flats
0.438 inches maximum
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector-to-emitter, base open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
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Current Rating Per Characteristic
10.00 amperes maximum collector current, dc
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Power Rating Per Characteristic
50.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Test Data Document
30003-917as6068 drawing
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Thread Series Designator
unf
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Inclosure Material
metal
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Iii End Item Identification
wgu-6c/b
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-111
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Mounting Method
threaded stud
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Nominal Thread Size
0.164 inches
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Semiconductor Material
silicon
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Special Features
case contains beryllium oxide - handle and dispose iaw hazmat procedures; junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug