2N6512
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6512
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
400.0 maximum collector to base voltage/static/emitter open and 400.0 maximum collector-to-emitter substaining voltage, resistance between base and emitter and 6.0 maximum emitter to base voltage, static, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Current Rating Per Characteristic
7.00 amperes source cutoff current maximum and 10.00 amperes source cutoff current blank and 3.00 amperes source cutoff current minimum
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Power Rating Per Characteristic
120.0 watts small-signal input power, common-collector preset
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Overall Height
0.450 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Overall Length
1.573 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2