2N6513

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N6513

5961-01-261-4004

5961 - Semiconductor Devices and Associated Hardware

Hybrid Semiconductors & Electronics

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    400.0 maximum collector to base voltage/static/emitter open and 400.0 maximum collector-to-emitter substaining voltage, resistance between base and emitter and 6.0 maximum emitter to base voltage, static, collector open

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Current Rating Per Characteristic

    7.00 amperes source cutoff current maximum and 10.00 amperes source cutoff current blank and 3.00 amperes source cutoff current minimum

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Power Rating Per Characteristic

    120.0 watts small-signal input power, common-collector preset

  • Overall Height

    0.450 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Overall Length

    1.573 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

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Providing Quality People

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