ROM/PROM

Microcircuits, Electronic

MICROCIRCUIT,MEMORY

ROM/PROM

5962-01-262-9879

5962 - Microcircuits, Electronic

Defense Electronics Supply Center

MICROCIRCUIT,MEMORY

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Technical Characteristics

  • Voltage Rating And Type Per Characteristic

    12.0 volts maximum power source

  • Body Width

    0.358 inches maximum

  • Output Logic Form

    transistor-transistor logic

  • Input Circuit Pattern

    14 input

  • Body Height

    0.100 inches maximum

  • Case Outline Source And Designator

    c-2 mil-m-38510

  • Terminal Surface Treatment

    solder

  • Inclosure Material

    ceramic

  • Inclosure Configuration

    leadless flat pack

  • Storage Temp Range

    -65.0/+150.0 deg celsius

  • Maximum Power Dissipation Rating

    2.0 watts

  • Time Rating Per Chacteristic

    45.00 nanoseconds maximum propagation delay time, high to low level output

  • Terminal Type And Quantity

    20 leadless

  • Part Name Assigned By Controlling Agency

    14-input 4-output and/or invert gate array

  • Test Data Document

    96906-mil-std-883b standard (includes industry or association standards, individual manufactureer standards, etc.).

  • Features Provided

    burn in and bipolar and monolithic and hermetically sealed and programmed

  • Memory Device Type

    pal

  • Operating Temp Range

    -55.0/+125.0 deg celsius

  • Body Length

    0.358 inches maximum

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AS6081 Methods

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