G104652-822

Technical Characteristics

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  monolithic and burn in and hermetically sealed and bipolar and programmable

• Current Rating Per Characteristic

  100.00 milliamperes forward current, maximum peak total value not applicable

• Memory Device Type

  pal

• Time Rating Per Chacteristic

  45.00 nanoseconds maximum propagation delay time, low to high level output and 45.00 nanoseconds maximum propagation delay time, high to low level output

• Terminal Type And Quantity

  20 leadless

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Maximum Power Dissipation Rating

  2.0 watts

• Input Circuit Pattern

  10 input

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Configuration

  leadless flat pack

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Case Outline Source And Designator

  c-2 mil-m-38510

• Body Height

  0.100 inches maximum

• Output Logic Form

  transistor-transistor logic

• Body Width

  0.358 inches maximum

• Body Length

  0.358 inches maximum