82009

Technical Characteristics

• Maximum Power Dissipation Rating

  1.04 watts

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum power source and 7.0 volts maximum power source

• Bit Quantity (Non-Core)

  65536

• Features Provided

  programmed

• Nuclear Hardness Critical Feature

  hardened

• Precious Material

  gold

• Terminal Type And Quantity

  32 leadless

• Special Features

  nuclear hardness critical items

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Time Rating Per Chacteristic

  55.00 nanoseconds maximum propagation delay time, low to high level output and 55.00 nanoseconds maximum propagation delay time, high to low level output

• Word Quantity (Non-Core)

  8192

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Body Length

  0.560 inches maximum

• Case Outline Source And Designator

  c-12 mil-m-38510

• Body Width

  0.458 inches maximum

• Precious Material And Location

  terminal surface option gold

• Inclosure Configuration

  dual-in-line

• Input Circuit Pattern

  14 input

• Output Logic Form

  transistor-transistor logic

• Body Height

  0.120 inches maximum