N82S185F

Technical Characteristics

• Power Source Dc Voltage In Volts And Polarity

  7.0 positive maximum

• Input Circuit Pattern

  11 input

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Body Height

  0.175 inches maximum

• Body Width

  0.302 inches maximum

• Body Length

  0.925 inches maximum

• Inclosure Material

  ceramic

• Terminal Quantity

  18

• Design Function And Quantity

  1 memory,read only

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Features Provided

  monolithic and bipolar and programmable

• Operating Temp Range

  m0.0/p75.0 deg celsius

• Maximum Power Dissipation Rating

  409.6 milliwatts

• Terminal Surface Treatment

  solder dip