352-1140-020

Technical Characteristics

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Mounting Method

  terminal

• Overall Diameter

  0.230 inches maximum

• Internal Configuration

  field effect-dual gate

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-72

• Features Provided

  hermetically sealed case and electrostatic sensitive

• Voltage Rating In Volts Per Characteristic

  30.0 maximum drain to gate voltage and 25.0 maximum drain to source voltage

• Overall Length

  0.210 inches maximum

• Semiconductor Material

  silicon

• Power Rating Per Characteristic

  360.0 milliwatts small-signal input power, common-collector minimum

• Terminal Length

  0.500 inches minimum

• Current Rating Per Characteristic

  50.00 milliamperes source cutoff current maximum of standard range and -10.00 milliamperes zero-gate-voltage source current torr

• Inclosure Material

  metal

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction

• Terminal Type And Quantity

  4 uninsulated wire lead

• Field Force Effect Type

  electrostatic charge

• Terminal Circle Diameter

  0.100 inches nominal