353-3316-010

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Component Function Relationship

  matched

• Voltage Rating In Volts Per Characteristic

  0.4 maximum forward voltage, dc all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode

• Inclosure Material

  glass all semiconductor device diode

• Features Provided

  hermetically sealed case and electrostatic sensitive

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius junction all semiconductor device diode

• Internal Configuration

  junction contact all semiconductor device diode

• Overall Diameter

  0.076 inches maximum all semiconductor device diode

• Terminal Length

  1.000 inches minimum all semiconductor device diode

• Current Rating Per Characteristic

  1.00 microamperes source cutoff current preset all semiconductor device diode

• Internal Junction Configuration

  pn all semiconductor device diode

• Overall Length

  0.170 inches maximum all semiconductor device diode

• Power Rating Per Characteristic

  250.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Terminal Type And Quantity

  4 uninsulated wire lead all semiconductor device diode

• Field Force Effect Type

  electrostatic charge