IRFH450

Technical Characteristics

• Semiconductor Material

  silicon

• Nominal Thread Size

  0.250 inches

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-61

• Overall Diameter

  0.610 inches maximum

• Inclosure Material

  metal

• Thread Series Designator

  unf

• Overall Width Across Flats

  0.687 inches maximum

• Mounting Method

  threaded stud

• Channel Polarity And Control Type

  n-channel insulated gate type

• Internal Configuration

  field effect

• Mounting Facility Quantity

  1

• Overall Length

  0.460 inches maximum

• Terminal Type And Quantity

  3 tab, solder lug

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Power Rating Per Characteristic

  150.0 watts maximum total device dissipation

• Current Rating Per Characteristic

  13.00 amperes nominal drain current

• Voltage Rating In Volts Per Characteristic

  500.0 nominal drain to source voltage