L14F1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,PHOTO
L14F1
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,PHOTO
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Current Rating Per Characteristic
50.00 milliamperes peak forward surge current nominal and 100.00 nanoamperes repetitive peak forward current peak
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Test Data Document
53711-5366069 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector absolute
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End Item Identification
aegis
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Overall Length
0.225 inches minimum and 0.255 inches maximum
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Terminal Length
0.500 inches minimum
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Function For Which Designed
phototransistor and amplifier
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Semiconductor Material
gallium arsenide
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Voltage Rating In Volts Per Characteristic
25.0 maximum collector to emitter voltage/static/base open and 25.0 maximum collector to base voltage/static/emitter open and 5.0 maximum emitter to collector voltage, dc
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Inclosure Material
metal and glass
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Terminal Circle Diameter
0.100 inches nominal
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Special Features
base lead 0.05 in. max.; internal junction configuration: npn