GZ54211B

Technical Characteristics

• Voltage Rating In Volts Per Characteristic

  39.0 maximum breakdown voltage, dc all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air

• Semiconductor Material

  silicon all semiconductor device diode

• Terminal Type And Quantity

  2 turret

• Overall Height

  0.550 inches maximum

• Power Rating Per Characteristic

  24.0 watts small-signal input power, common-collector pascal all semiconductor device diode

• Component Name And Quantity

  24 semiconductor device diode

• Features Provided

  hermetically sealed case

• Overall Width

  1.900 inches maximum

• Special Features

  all semiconductor device diode junction pattern arrangement: pn

• Current Rating Per Characteristic

  1.00 milliamperes forward current, average peak all semiconductor device diode

• Mounting Facility Quantity

  2

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Overall Length

  2.900 inches maximum

• Function For Which Designed

  transient suppressor