JANTXV2N6766
Semiconductor Devices and Associated Hardware
TRANSISTOR
JANTXV2N6766
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Test Data Document
0bdc6-13-1330005 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Criticality Code Justification
feat
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Overall Length
1.573 inches maximum
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Nuclear Hardness Critical Feature
hardened
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Electrode Internally-Electrically Connected To Case
drain
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-204ae
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Special Features
nuclear hardness critical item
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Overall Height
0.360 inches maximum
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector preset
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Specification/Standard Data
81349-mil-prf-19500/543 government specification
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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End Item Identification
lgm 30
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Method
unthreaded hole
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Internal Configuration
field effect
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
200.0 maximum drain to source voltage and 200.0 maximum drain to gate voltage and 20.0 maximum gate to source voltage