BUZ45

Technical Characteristics

• Channel Polarity And Control Type (Non-Core)

  n-channel junction type

• Semiconductor Material

  silicon

• Overall Height

  0.280 inches minimum and 0.450 inches maximum

• Mounting Facility Quantity

  2

• Mounting Method

  unthreaded hole

• Internal Configuration

  field effect

• Inclosure Material

  metal

• Voltage Rating In Volts Per Characteristic

  500.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 20.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

• Power Rating Per Characteristic

  125.0 watts small-signal input power, common-collector absolute

• Overall Length

  1.365 inches minimum and 1.387 inches maximum

• Current Rating Per Characteristic

  9.60 amperes forward current, average absolute and 8.60 amperes zero-gate-voltage source current pascal

• Terminal Type And Quantity

  2 pin

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air