BUZ53A
Semiconductor Devices and Associated Hardware
TRANSISTOR
BUZ53A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
drain
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Maximum Operating Temp Per Measurement Point
140.0 deg celsius ambient air
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
2.0 minimum gate to source threshold voltage and 4.5 maximum gate to source threshold voltage
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Overall Length
1.550 inches maximum
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Mounting Facility Quantity
2
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Mounting Method
unthreaded hole
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Internal Configuration
field effect
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Inclosure Material
metal
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Overall Height
0.250 inches minimum and 0.300 inches maximum
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Terminal Type And Quantity
2 pin
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Current Rating Per Characteristic
500.00 nanoamperes zero-gate-voltage source current watts and 250.00 microamperes zero-gate-voltage source current megawatts
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Features Provided
electrostatic sensitive
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-204aa