MTM-1N100

Technical Characteristics

• Electrode Internally-Electrically Connected To Case

  drain

• Channel Polarity And Control Type (Non-Core)

  n-channel junction type

• Maximum Operating Temp Per Measurement Point

  140.0 deg celsius ambient air

• Overall Width

  1.050 inches maximum

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  2.0 minimum gate to source threshold voltage and 4.5 maximum gate to source threshold voltage

• Overall Length

  1.550 inches maximum

• Mounting Facility Quantity

  2

• Mounting Method

  unthreaded hole

• Internal Configuration

  field effect

• Inclosure Material

  metal

• Overall Height

  0.250 inches minimum and 0.300 inches maximum

• Terminal Type And Quantity

  2 pin

• Current Rating Per Characteristic

  500.00 nanoamperes zero-gate-voltage source current watts and 250.00 microamperes zero-gate-voltage source current megawatts

• Features Provided

  electrostatic sensitive

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-204aa