VP0350N1

Technical Characteristics

• Inclosure Material

  metal

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  -1.50 amperes nominal drain current

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air

• Terminal Type And Quantity

  1 case and 2 pin

• Power Rating Per Characteristic

  100.0 watts maximum total device dissipation

• Voltage Rating In Volts Per Characteristic

  -500.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and -500.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

• Mounting Method

  unthreaded hole

• Channel Polarity And Control Type

  p-channel insulated gate type

• Internal Configuration

  field effect

• Mounting Facility Quantity

  2

• Overall Width

  1.050 inches maximum

• Overall Height

  0.350 inches nominal

• Overall Length

  1.573 inches maximum