R181CH18/VL
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
R181CH18/VL
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
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Terminal Type And Quantity
1 quick disconnect, male and 2 case and 1 pin
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Power Rating Per Characteristic
2.0 watts maximum average gate power dissipation and 100.0 watts maximum peak ga
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~1
te power dissipation
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Current Rating Per Characteristic
180.00 amperes maximum on-state current, peak and 7500.00 amperes maximum peak o
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Voltage Rating In Volts Per Characteristic
1800.0 maximum repetitive peak off-state voltage and 500.0 maximum repetitive pe
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~1
ak reverse voltage and 600.0 maximum nonrepetitive peak reverse voltage
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Semiconductor Material
silicon
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Mounting Method
press fit
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Electrode Internally-Electrically Connected To Case
anode
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Overall Length
1.030 inches minimum and 1.060 inches maximum
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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~1
n-state surge current
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Features Provided
hermetically sealed case
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-200ac
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Overall Diameter
2.300 inches maximum